si pin photodiodes s11499 series large area, enhanced near ir sensitivity, using a mems technology www.hamamatsu.com ir-enhanced 1 structure parameter s11499 s11499-01 unit package to-5 to-8 - window material borosilicate glass - photosensitive area 3.0 5.0 mm effective photosensitive area 7.0 19.6 mm 2 electrical and optical characteristics (ta=25 c) parameter symbol condition s11499 s11499-01 unit min. typ. max. min. typ. max. spectral response range - 360 to 1140 -- 360 to 1140 -nm peak sensitivity wavelength p - 1000 - - 1000 - nm photosensitivity s =1060 nm 0.54 0.6 - 0.54 0.6 - a/w short circuit current isc 100 lx 6.0 7.8 - 15 21 - a dark current i d v r =20 v - 0.05 5 - 0.1 10 na cutoff frequency fc v r =20 v, -3 db, r l =50 - 30 - - 15 - mhz terminal capacitance ct v r =20 v, f=1 mhz -13- -33-pf hamamatsu has developed various types of si detectors that offer enhanced near-infrared sensitivity due to a mems struc- ture formed on the back side of the photodiode. the s11499 series is a family of si pin photodiodes with drastically im- proved sensitivity in the near infrared region at wavelengths longe r than 900 nm. compared to our conventional product, the s11499 series has much higher sensitivity to yag laser light (1.06 m). it also offers improved temperature characteristics of sensitivity at wavelengths longer than 950 nm. absolute maximum ratings parameter symbol condition s11499 s11499-01 unit reverse voltage v r max. ta=25 c 30 v operating temperature topr -40 to +100 c storage temperature tstg -55 to +125 c note: exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. always be sure to use the product within the absolute maximum ratings. high sensitivity: 0.6 a/w ( =1060 nm) large active area: 5.0 mm (s11499-01) high reliability package: to-5/to-8 metal package features yag laser monitor applications
si pin photodiodes s11499 series 2 wavelength (nm) photosensitivity (a/w) 0.8 0.6 0.4 0.2 0 300 800 1000 600 400 900 1100 700 500 1200 (typ. ta=25 c) s11499 series conventional type qe=100% wavelength (nm) temperature coefficient (%/c) -0.5 1.5 1.0 0.5 0 -1.0 600 900 1000 800 700 1100 (typ.) conventional type s11499 series kpinb0368eb kpinb0369eb spectral response photosensitivity temperature characteristics reverse voltage (v) dark current 0.01 0.1 1 10 100 1 pa 10 na 1 na 100 pa 10 pa (typ. ta=25 c) s11499-01 s11499 reverse voltage (v) terminal capacitance 0.1 1 10 100 1 pf 1 nf 100 pf 10 pf (typ. ta=25 c, f=1 mhz) s11499-01 s11499 kpinb0370ea kpinb0371ea dark current vs. reverse voltage terminal capacitance vs. reverse voltage
cat. no. kpin1082e03 oct. 2015 dn si pin photodiodes s11499 series information described in this material is current as of october 2015. 3 dimensional outlines (unit: mm) kpina0116ea s11499 s11499-01 (20) 4.2 0.2 2.5 0.4 max. 5.08 0.25 1.5 max. 3.0 9.1 0.2 8.1 0.1 5.9 0.1 photosensitive area distance from photosensitive area center to cap center -0.3x+0.3 -0.3y+0.3 the glass window may extend a maximum of 0.15 mm above the upper surface of the cap. photosensitive surface glass case 0.45 lead x y y x (15) 5.0 0.2 2.8 12.35 0.1 13.9 0.2 7.5 0.2 10.5 0.1 case 0.5 max. 1.0 max. 5.0 photosensitive area 0.45 lead photosensitive surface index mark ( 1.4) glass distance from photosensitive area center to cap center -0.4x+0.4 -0.4y+0.4 the glass window may extend a maximum of 0.2 mm above the upper surface of the cap. kpina0117ea www.hamamatsu.com hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, bridgewater, n.j. 08807, u.s.a., telephone: (1) 908-231-0960, fax: (1) 908-23 1-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152-375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, united kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: torshamnsgatan 35 16440 kista, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-5 09-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese (milano), italy, telephone: (39) 02-93581733 , fax: (39) 02-93581741 china: hamamatsu photonics (china) co., ltd.: b1201, jiaming center, no.27 dongsanhuan beilu, chaoyang district, beijing 100020 , china, telephone: (86) 10-6586-6006, fax: (86) 10-6586-2866 product specifications are subject to change without prior notice due to improvements or other reasons. this document has been carefully prepared and the information contained is believed to be accurate. in rare cases, however, there may be inaccuracies such as text errors. before using these products, always contact us for the delivery specification sheet to check the latest specifications. the product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural d isasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
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